Analysis and modeling for MOSFET degradation under RF stress

Mosfet Modeling for Rf Circuit Design

In this paper, we discuss some important issues in MOSFET modeling for radio-frequency (RF) integratedcircuit (IC) design. We start with the introduction of the basics of RF modeling. A simple sub-circuit model is presented with comparisons of the data for both y parameter and fT characteristics. Good model accuracy is achieved against the measurements for a 0.25μm RF CMOS technology. The high ...

RF Modeling for FDSOI MOSFET and Self Heating Effect on RF Parameter Extraction

In this paper, a BSIMSOI RF gate resistance model for FDSOI MOSFET is introduced and verified. With the addition of the gate resistance model, the RF characteristic of FDSOI MOSFET could be modeled well. Self-heating effect (SHE) will affect RF data fitting significantly. A simple method to extract thermal resistance is proposed.

Study on RF Characteristics and Modeling of Scaled MOSFET

Speech Under Stress: Analysis, Modeling and Recognition

In this chapter, we consider a range of issues associated with analysis, modeling, and recognition of speech under stress. We start by defining stress, what could be perceived as stress, and how it affects the speech production system. In the discussion that follows, we explore how individuals differ in their perception of stress, and hence understand the cues associated with perceiving stress....

Reliability computation under dynamic stress-strength modeling with cumulative stress and strength degradation

Reliability function is defined under suitable assumptions for dynamic stressstrength scenarios where strength degrades and stress accumulates over time. Methods for numerical evaluation of reliability are suggested under deterministic strength degradation and cumulative damage due to shocks arriving according to a Poisson process using simulation method and inversion theorem. These methods are...